NDPL070N10BG

N-Channel Power MOSFET

070N10NS

OptiMOSTM3Power-Transistor

Features •Verylowgatechargeforhighfrequencyapplications •Optimizedfordc-dcconversion •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Qualifiedac

NDPL070N10B

N-ChannelPowerMOSFET

NDPL070N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=70A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVTFS070N10MCL

MOSFET-Power,SingleN-Channel100V,65m,13A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFWS070N10MCL−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTFS070N10MCLTAG

MOSFET-Power,SingleN-Channel100V,65m,13A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFWS070N10MCL−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTFWS070N10MCLTAG

MOSFET-Power,SingleN-Channel100V,65m,13A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFWS070N10MCL−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant