丝印：068N20N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.15173 Mbytes 页数：11 Pages

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英飞凌

丝印：068N20N6；Package：PG-HDSOP-16；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61

文件：1.24882 Mbytes 页数：15 Pages

Infineon

英飞凌