068N20N6

型号：IPB068N20NM6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61

068N20N6

型号：IPTC068N20NM6；Package：PG-HDSOP-16；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61