丝印：068N20N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.15173 Mbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS ™ 6 功率 MOSFET 200 V 正常电平，采用 D²PAK 3 引脚封装

\n优势:;

Infineon

英飞凌

MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61

文件：1.24882 Mbytes 页数：15 Pages

INFINEON

英飞凌

TO247

INFINEON/英飞凌

上传：深圳庞田科技有限公司

TO247

INFINEON/英飞凌

上传：深圳庞田科技有限公司