| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：06N03LA；Package：TO-263-3；OptiMOS 2 Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •175°Coperatingtemperature •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：06N03LA；Package：TO-263-3；OptiMOS 2 Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •175°Coperatingtemperature •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：06N03LA；Package：TO-220-3-1；OptiMOS 2 Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •175°Coperatingtemperature •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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