丝印：065N10N；Package：TO-263；100 V N-Channel MOSFET

Features • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • VDS=100V • ID(at VGS=10V)=80A • RDS(ON) (at VGS=10V)

文件：884.2 Kbytes 页数：9 Pages

UMW

友台半导体

100 V N-Channel MOSFET

Features • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • VDS=100V • ID(at VGS=10V)=80A • RDS(ON) (at VGS=10V)

文件：884.2 Kbytes 页数：9 Pages

UMW

友台半导体