068

型号：7448991068；WE-MCRI SMT Molded Coupled Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

068N20N6

型号：IPB068N20NM6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61

068N10N

型号：IPD068N10N3G；Package：TO-252；100V N-Channel MOSFET

Features •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Idealforhigh-frequencyswitchingandsynchronousrectification •(VGS=10V) •VDS(V)=100V •ID=90A •RDS(ON)

068P03L

型号：IPD068P03L3G；Package：TO-252；-30V P-Channel MOSFET

Features •QualifiedaccordingJEDEC1)fortarget •175°Coperatingtemperature •100Avalanchetested •Pb-free;RoHScompliant,halogenfree •applications:powermanagement

068P03L

型号：IPD068P03L3G-TP；Package：TO-252；P-Channel Enhancement Mode MOSFET

Features ©Vos=30V.5=B0A @Reso=8ma@Ves=-10v ©Ro11mO@Vos=45V.

068N20N6

型号：IPTC068N20NM6；Package：PG-HDSOP-16；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61

068R5ND

型号：SVT068R5NDTR；Package：TO-252-2L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

068R5NL5

型号：SVT068R5NL5TR；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

068R5NS

型号：SVT068R5NSTR；Package：TO-263-2L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

068R5NT

型号：SVT068R5NT；Package：TO-220-3L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th