丝印：068R5NT；Package：TO-220-3L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 页数：11 Pages

SILAN

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低压MOS功率管

SVT068R5NT/D/S  N沟道增强型功率MOS场效应晶体管采用先进的LVMOS 工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于不间断电源及逆变器系统电源管理。\n\n • 80A，60V，RDS(on)（典型值）=7mW@VGS=10V\n• 低反向传输电容\n• 提升了dv/dt 能力\n;

Silan

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80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 页数：11 Pages

SILAN

士兰微

80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 页数：11 Pages

SILAN

士兰微