| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：0610PAB；Package：LFPAK56；60 V, 10 A PNP high power bipolar transistor 1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60610NY 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrinte | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：0610PAB；Package：SOT669；60 V, 10 A PNP high power bipolar transistor 1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60610NY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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