IPT047N15NM6

Marking：047N15N6；Package：PG-HSOF-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020

IPTC044N15NM5

Marking：044N15N5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPTG044N15NM5

Marking：044N15N5；Package：PG-HSOG-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQE046N08LM5

Marking：046N8L5；Package：PG-TSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQE046N08LM5CG

Marking：046N8C5；Package：PG-TTFN-9；OptiMOSTM 5 Power-Transistor, 80 V

Features •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

ISC044N15NM6

Marking：04415N6；Package：PG-TSON-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020

ISC045N03L5S

Marking：045N03L5；Package：PG-TDSON-8；OptiMOSTMPower-MOSFET,30V

Features •OptimizedforhighperformanceBuckconverter •Optimizedforcleanswitching •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

ISC046N13NM6

Marking：046N13N6；Package：PG-TDSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100%avalanchetestedg •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freele

ISL45045IRZ

Marking：045Z；Package：10Ld3x3TDFN；Output Guaranteed Monotonic Over-Temperature

I2CLCDModuleCalibrator TheISL45045isspecificallydesignedtoworkinnotebook applicationswherethesystem’sEEPROMispoweredup beforetherestofthedevicesontheI2Cbus.Thisenables datatobedownloadedtoagraphicscard.TheESD protectionschemeontheSDA,SCLandSCL_Spi

ISL45045IRZ-T

Marking：045Z；Package：10Ld3x3TDFN；Output Guaranteed Monotonic Over-Temperature

I2CLCDModuleCalibrator TheISL45045isspecificallydesignedtoworkinnotebook applicationswherethesystem’sEEPROMispoweredup beforetherestofthedevicesontheI2Cbus.Thisenables datatobedownloadedtoagraphicscard.TheESD protectionschemeontheSDA,SCLandSCL_Spi