PHPT60410NY-Q

Marking：0410NAB；Package：SOT669；40 V, 10 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT60410PY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin

PHPT60410PY

Marking：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. NPNcomplement:PHPT60410NY 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •Red

PHPT60410PY-Q

Marking：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60410NY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •

PHPT60415NY

Marking：0415NAB；Package：LFPAK56；40 V, 15 A NPN high power bipolar transistor

Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)powerplasticpackage. PNPcomplement:PHPT60415PY Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrintedCircuit

PHPT60415NY-Q

Marking：0415NAB；Package：SOT669；40 V, 15 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT60415PY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin

PHPT60415PY

Marking：0415PAB；Package：LFPAK56；40 V, 15 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60415NY 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrinte

PHPT60415PY-Q

Marking：0415PAB；Package：SOT669；40 V, 15 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60415NY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin

PJMH040N60EC

Marking：040N60EC；Package：TO-247AD-3LD；600V N-Channel Super Junction MOSFET

Feature: RDS(ON)Max,VGS@10V:40mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100%AvalancheTested 100%RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard Application PFCofIndustrialPower/Server

PMEG040V030EPE

Marking：040VU03E；Package：CFP15B；40 V, 3 A low VF Schottky barrier rectifier

1.Generaldescription PlanarLowVFSchottkybarrierrectifierencapsulatedinaCFP15B(SOT1289B)powerandflat leadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Verylowforwardvoltage •Highpowercapabilityduetoclip-bondtechnology •SmallandthinSMD

PMEG040V030EPE-Q

Marking：040V；Package：CFP15B；40 V, 3 A low VF Schottky barrier rectifier

1.Generaldescription PlanarLowVFSchottkybarrierrectifierencapsulatedinaCFP15B(SOT1289B)powerandflat leadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Verylowforwardvoltage •Highpowercapabilityduetoclip-bondtechnology •SmallandthinSMD