PMEG045V150EPE

Marking：045V150E；Package：CFP15B；45 V, 15 A low VF Schottky barrier rectifier

1.Generaldescription PlanarLowVFSchottkybarrierrectifierencapsulatedinaCFP15B(SOT1289B)powerandflat leadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Verylowforwardvoltage •Highpowercapabilityduetoclip-bondtechnology •SmallandthinSMD

PMEG045V150EPE-Q

Marking：045V；Package：CFP15B；45 V, 15 A low VF Schottky barrier rectifier

1.Generaldescription PlanarLowVFSchottkybarrierrectifierencapsulatedinaCFP15B(SOT1289B)powerandflat leadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Verylowforwardvoltage •Highpowercapabilityduetoclip-bondtechnology •SmallandthinSMD

PSMQC040N08NS2

Marking：040N08NS；Package：DFN5060-8L；80V N-Channel Enhancement Mode MOSFET

Feature RDS(ON)

PSMQC040N10NS2

Marking：040N10NS；Package：DFN5060-8L；100V N-Channel Enhancement Mode MOSFET

Feature RDS(ON)

PSMQC042N10LS2

Marking：042N10LS；Package：DFN5060X-8L；100V N-Channel Enhancement Mode MOSFET

Feature RDS(ON)

SCT040TO65G3

Marking：040TO65G3；Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package

Features •Veryfastandrobustintrinsicbodydiode •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Sourcesensingpinforincreasedefficiency Applications •Switchingmodepowersupply •DC-DCconverters Description ThissiliconcarbidePo

SCT040W65G3-4

Marking：040W65G3；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

Features •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Sourcesensingpinforincreasedefficiency Applications •Switchingmodepow

SPP04N80C3

Marking：04N80C3；Package：PG-TO220-3；CoolMOSTM Power Transistor

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances

SVT041R7NT

Marking：041R7NT；Package：TO-220-3L；195A, 40V N-CHANNEL MOSFET

DESCRIPTION SVT041R7NTisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilan'sLVMOStechnology. Theimprovedprocessandcellstructurehavebeenespecially tailoredtominimizeon-stateresistance,providesuperiorswitching performance. Thisdevi

SVT042R5NL5TR

Marking：042R5NL5；Package：PDFN-8-5X6X0.95-1.27；240A, 40V N-CHANNEL MOSFET

DESCRIPTION SVT042R5NL5(T)isanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingadvancedLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. This