PESD5V0S1ULD

Marking：0100；Package：DFN1006D-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients.ThedeviceishousedinaSOD882D leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolde

PESD5V0V1BLD

Marking：0111；Package：SOD882D；Very low capacitance bidirectional ESD protection diode

1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishoused inaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewi

PESD5V0V1BLD-Q

Marking：0111；Package：DFN1006D-2；Very low capacitance bidirectional ESD protection diode

1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishoused inaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewi

PESD5V0X2UMB-Q

Marking：0100；Package：DFN1006B-3；Ultra low capacitance unidirectional double ESD protection diode

1.Generaldescription UltralowcapacitanceunidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeina DFN1006B-3(SOT883B)leadlessultrasmallSurface-MountedDevice(SMD)plasticpackage, designedtoprotectuptotwosignallinesfromthedamagecausedbyESDandothertrans

PMBT2222AMB

Marking：01100111；Package：DFN1006B-3；40 V, 600 mA NPN switching transistor

1.Generaldescription NPNswitchingtransistorinanultrasmallDFN1006B-3(SOT883B)leadlessSurface-Mounted Device(SMD)plasticpackage. PNPcomplement:PMBT2907AMB 2.Featuresandbenefits •Highcurrent(max.600mA) •Lowvoltage(max.40V) •LeadlessultrasmallSMDplasticpacka

PMBT2907AMB

Marking：0110；Package：SOT883B；60 V, 600 mA PNP switching transistor

1.Generaldescription PNPswitchingtransistorinanultrasmallDFN1006B-3(SOT883B)leadlessSurface-Mounted Device(SMD)plasticpackage. NPNcomplement:PMBT2222AMB 2.Featuresandbenefits •Highcurrent(max.600mA) •Lowvoltage(max.60V) •LeadlessultrasmallSMDplasticpackage

PMBT3904MB

Marking：01000111；Package：DFN1006B-3；40 V, 200 mA NPN switching transistor

Generaldescription NPNsingleswitchingtransistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PMBT3906MB. Featuresandbenefits •Singlegeneral-purposeswitchingtransistor •UltrasmallSMDplasticpackage •Board-spacered

PMBT3906MB

Marking：01001000；Package：DFN1006B-3；40 V, 200 mA PNP switching transistor

Generaldescription PNPsingleswitchingtransistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PMBT3904MB. Featuresandbenefits •Singlegeneral-purposeswitchingtransistor •AEC-Q101qualified •UltrasmallSMDplasticpack

PMEG2005ELD

Marking：0101；Package：SOD882D；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD882Dleadlessultra smallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside pads. 1.2F

PMEG2010EPK

Marking：0100；Package：DFN1608D-2；20 V, 1 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaleadlessultrasmall SOD1608(DFN1608D-2)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderableside