NDC7001C

Marking：01CK；Package：SOT23-6；N- and P-Channel 60 V (D-S) MOSFET

APPLICATIONS ReplaceDigitalTransistor,Level-Shifter PowerSupplyConverterCircuits BatteryOperatedSystems

NVLJWS011N04CLT1G

Marking：011N；Package：WDFNW6；MOSFET ??Power, Single N-Channel 40 V, 11 m, 37 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVLJWS011N06CLTAG

Marking：011N；Package：WDFNW6；MOSFET - Power, Single N-Channel 60 V, 9 m, 48 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVLJWS013N03CLTAG

Marking：013N；Package：WDFNW6；MOSFET - Power, Single N-Channel 30 V, 13 m, 35 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMFS014P04M8LT1G

Marking：014P04；Package：DFN5；MOSFET ??Power, Single P-Channel-40 V, 13.8 m, -52.1 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVMFWS014P04M8L−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFR−FreeandareRoHSCompliant

NVMFS016N10MCLT1G

Marking：016L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 14 m, 46 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NVMFWS016N10MCL−WettableFlankProducts •TheseDevicesarePb−Free,HalogenFree/BFRFree,Berylliu

NVMFWS014P04M8LT1G

Marking：014P4W；Package：DFN5；MOSFET ??Power, Single P-Channel-40 V, 13.8 m, -52.1 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVMFWS014P04M8L−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFR−FreeandareRoHSCompliant

NVMFWS016N10MCLT1G

Marking：016W10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 14 m, 46 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NVMFWS016N10MCL−WettableFlankProducts •TheseDevicesarePb−Free,HalogenFree/BFRFree,Berylliu

NVMJD012N06CLTWG

Marking：012N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 11.9 m, 42 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJD015N06CLTWG

Marking：015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant