NVTYS010N04CLTWG

Marking：010N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 9.5 m, 43 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS010N04CTWG

Marking：010N04C；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 12 m, 38 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS010N06CLTWG

Marking：010N06CL；Package：LFPAK33；MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS014N08HLTWG

Marking：014N08HL；Package：LFPAK33；MOSFET - Power, Single N-Channel 80 V, 13.9 m, 40 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS014P04M8LTWG

Marking：014P；Package：LFPAK33；MOSFET – Power, Single P-Channel −40 V, 13.5 m, −53 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFR−FreeandareRoHSCompliant

PBSS4130QA

Marking：010010；Package：DFN1010D-3；30 V, 1 A NPN low VCEsat (BISS) transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5130QA. 2.Featuresandbenefits •Verylowcollector-

PBSS4230QA

Marking：011100；Package：DFN1010D-3；30 V, 2 A NPN low VCEsat (BISS) transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5230QA. 2.Featuresandbenefits •Verylowcollector-

PDTA123JMB

Marking：01001001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC123JMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTB113ZQA

Marking：011110；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB113ZQA

Marking：011110；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac