PMZB290UNE2

Marking：0101；Package：SOT883B；20 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Lowthresholdvoltage •Veryfast

PMZB320UPE

Marking：0101；Package：SOT883B；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Lowthresholdvoltage •Veryfast

PMZB350UPE

Marking：0100；Package：SOT883B；20 V, single P-channel Trench MOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFE

PSMN015N10NS2

Marking：015N10NS；Package：TOLL；100V N-Channel Enhancement Mode MOSFET

Feature RDS(ON)

PW01341ST

Marking：01341；PoE SERIES POWER TRANSFORMER

RoHSCompliant Operatingtemperature:-40℃to+125℃ Storagetemperature:-40℃to+125℃

RAA2230124GP3JA0

Marking：012；Package：5LDTSOT23；700V AC/DC Buck Regulator with Ultra-Low Standby Power

Features ▪Ultralowstandbypower(

RAA2230124GP3NA0

Marking：012；Package：5LDTSOT23；700V AC/DC Buck Regulator with Ultra-Low Standby Power

Features ▪Ultralowstandbypower(

RMA9N20S5

Marking：0101；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=20V,ID=0.87A RDS(ON)

SCT011H75G3AG

Marking：011H75G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV

SCT015W120G3-4AG

Marking：015W120G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

Features •AEC-Q101qualified •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •