NVMJD015N06CLTWG

Marking：015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS010N04CLTWG

Marking：010N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 10.3 m, 38 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS011N04CTWG

Marking：011N04C；Package：LFPAK4；MOSFET – Power, Single N-Channel 40 V, 12 m, 35 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS012N10MCLTWG

Marking：012N10MCL；Package：LFPAK4；MOSFET - Power, Single N-Channel 100 V, 12.2 m, 52 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVMYS013N08LHTWG

Marking：013N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS014N06CLTWG

Marking：014N06CL；Package：LFPAK4；MOSFET – Power, Single N-Channel 60 V, 15 m, 37 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS016N06CTWG

Marking：016N06C；Package：LFPAK4；MOSFET - Power, Single N-Channel 60 V, 16 m, 33 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS016N10MCLTWG

Marking：016N10MCL；Package：LFPAK4；MOSFET – Power, Single N-Channel 100 V, 14 m, 46 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFree,BerylliumFreeandareRoHSCompliant

NVTFS014P04M8LTAG

Marking：014M；Package：WDFN8；MOSFET ??Power, Single, P-Channel -40 V, 13.8 m, -49 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFWS014P04M8L−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFR−FreeandareRo

NVTFWS014P04M8LTAG

Marking：014W；Package：WDFN8；MOSFET ??Power, Single, P-Channel -40 V, 13.8 m, -49 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFWS014P04M8L−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFR−FreeandareRo