FMMT618

NPNSILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT3A *12APeakPulseCurrent *ExcellentHFECharacteristicsUpTo12A(pulsed) *ExtremelyLowSaturationVoltageE.g.8mVTyp. *ExtremelyLowEquivalentOnResistance;RCE(sat)

FMMT618

NPNSiliconPlanarHighPerformanceTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •ExtremelyLowSaturationVoltage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:618

FMMT618

SOT-23Plastic-EncapsulateTransistors

FMMT618TA

20VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

Features •BVCEO>20V •IC=2.5AContinuousCollectorCurrent •RCE(SAT)=50mΩforalowequivalentOn-Resistance •625mWPowerdissipation •hFEcharacterisedupto6Aforhighcurrentgainholdup •ComplementaryNPNtype:FMMT718 •TotallyLead-Free&FullyRoHScompliant(Notes1

FMMTL618

NPNSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

FEATURES Verylowequivalenton-resistance;RCE(sat)=140mΩat1.25A COMPLEMENTARYTYPE–FMMTL718 PARTMARKINGDETAIL–L68

FMMTL618

SOT23NPNSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

FEATURES Verylowequivalenton-resistance;RCE(sat)=140mΩat1.25A COMPLEMENTARYTYPE–FMMTL718 PARTMARKINGDETAIL–L68

FMMTL618TA

SOT23NPNSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

FRJAE-618

FRJAEASSEMBLY6POSITION&8POSITIONWITHORWITHOUTFERRITESSINGLEPORTHIGHTEMPMATERIAL

FXT618

NPNSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FEATURES *10APeakpulsecurrent *ExcellenthFEcharacteristicsupto10A(pulsed) *Extremelylowsaturationvoltagee.g.7mVtyp. *ICcont3.5A APPLICATIONS *PowerMOSFETgatedriverinconjunctionwith complementaryZTX718

G618B

T-1,(3-mm)Round,PCBMount,RightAnleArray,G61XBSeries

[IDEA] T-1,(3-mm)Round,PCBMountRightAngleArray,G61XBSeries TheG61XBisaT-1sizeright-angleindicatorarray.TheLEDsarelocatedon4.57mm(0.18)centers.TheG61XBcanbesuppliedwiththedesiredlampspreassembledfrom1to9sectionslong.(G611BthruG619B)Thisseriesprovides