DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -20V; • IC = -3.5A Continuous Collector Current • RSAT = 64 mΩ for Low Equivalent On Resistance • Low Saturation Voltage (-220mV @ -1A) • hFE characterized up to -6A for high current gain holds up • Dual NPN saving footprint and component count • Low profile

文件：194.35 Kbytes 页数：7 Pages

DIODES

美台半导体

20V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64 mΩ for a low equivalent On-Resistance • hFE specified up to -6A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA

文件：163.15 Kbytes 页数：7 Pages

DIODES

美台半导体

20V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64 mΩ for a low equivalent On-Resistance • hFE specified up to -6A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA

文件：163.15 Kbytes 页数：7 Pages

DIODES

美台半导体

20V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64 mΩ for a low equivalent On-Resistance • hFE specified up to -6A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA

文件：163.15 Kbytes 页数：7 Pages

DIODES

美台半导体