60V, SOT23F, NPN high gain power transistor

Description This mid voltage NPN transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of

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60V NPN HIGH GAIN POWER TRANSISTOR

Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance Featu

文件：377.6 Kbytes 页数：7 Pages

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美台半导体

Package：SOT-23-3 扁平引线；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 5.5A SOT23F

DIODES

美台半导体

60V NPN low sat medium power transistor

Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High peak current • Low sat

文件：317.33 Kbytes 页数：8 Pages

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60V NPN low sat medium power transistor in SOT223

Features • BVCEO > 60V • IC = 7A Continuous Collector Current • ICM = 12A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：324.55 Kbytes 页数：8 Pages

DIODES

美台半导体

60V NPN low sat medium power transistor

Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High peak current • Low sat

文件：317.33 Kbytes 页数：8 Pages

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