60V, SOT89, NPN medium power transistor

Description Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Extremely low equivalent on resistance; RCE(sat) = 46mΩ at 5A • 5 a

文件：767.7 Kbytes 页数：8 Pages

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60V, SOT89, NPN medium power transistor

Features • BVCEO > 60V • IC = 5A Continuous Collector Current • Low Saturation Voltage VCE(sat)

文件：780.99 Kbytes 页数：8 Pages

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美台半导体

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 5A SOT89-3

DIODES

美台半导体

60V, SOT23, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss

文件：388.16 Kbytes 页数：6 Pages

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60V, SOT23, PNP medium power transistor

Features and Benefits • BVCEO > -60V Breakdown Voltage • 100V forward blocking voltage • IC = -3A Continuous Collector Current, • ICM = -9A Peak Pulse Current, • Low saturation voltage, VCE(sat)

文件：396.04 Kbytes 页数：8 Pages

DIODES

美台半导体

60V, SOT23, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss

文件：388.16 Kbytes 页数：6 Pages

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