100V, SOT23, medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

文件：391.47 Kbytes 页数：6 Pages

ZETEX

100V, SOT23, medium power transistor

Features • BVCEO > 100V • BVCEX > 170V Forward Blocking Voltage • BVECO > 6V Reverse Blocking Voltage • IC = 3A high Continuous Collector Current • Low Saturation Voltage, VCE(SAT)

文件：398.83 Kbytes 页数：6 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 3A SOT23-3

DIODES

美台半导体

100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

文件：391.88 Kbytes 页数：6 Pages

ZETEX

100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

文件：391.69 Kbytes 页数：6 Pages

DIODES

美台半导体

100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

文件：391.69 Kbytes 页数：6 Pages

DIODES

美台半导体