40V PNP LOW SATURATION TRANSISTOR AND

Features and Benefits PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104mΩ for a low equivalent On-Resistance • hFE characterized up to -3A for high current gain hold up Schottky Diode • BVR > 40V

文件：269.85 Kbytes 页数：10 Pages

DIODES

美台半导体

Package：8-WDFN 裸露焊盘；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 3A DFN3020B-8

DIODES

美台半导体

Schottky barrier diode

DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a small SOT23 plastic SMD package. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • V

文件：47.02 Kbytes 页数：8 Pages

PHI

PHI

NPN high-voltage transistors

DESCRIPTION NPN transistors in a SOT223 plastic package. PNP complement: BF723. FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages of colour television receivers • General purpose high voltage circuits.

文件：42.96 Kbytes 页数：8 Pages

PHI

PHI

Phase Control SCR (450-550 Amperes 2400 Volts)

Phase Control SCR 450-550 Amperes 2400 Volts Applications □ Power Supplies □ Battery Changers □ Motor Control □ VAR Generators

文件：720.59 Kbytes 页数：4 Pages

POWEREX