丝印：1C3；Package：SOT-23；12V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

文件：387.21 Kbytes 页数：6 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 12V 6A SOT23-3

DIODES

美台半导体

12V, SOT23, NPN low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 6V reverse blocking voltage Applications • MOSFET and IGBT gate driving

文件：476.5 Kbytes 页数：8 Pages

Zetex

12V, SOT23, NPN low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 6V reverse blocking voltage Applications • MOSFET and IGBT gate driving

文件：488.73 Kbytes 页数：8 Pages

DIODES

美台半导体

12V, SOT23, NPN low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 6V reverse blocking voltage Applications • MOSFET and IGBT gate driving

文件：476.5 Kbytes 页数：8 Pages

Zetex