丝印：1A1；Package：SOT-23；20V, SOT23, NPN low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi

文件：416.71 Kbytes 页数：8 Pages

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20V, SOT23, NPN low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi

文件：428.96 Kbytes 页数：8 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 2A SOT23-3

DIODES

美台半导体

20V NPN high gain transistor

Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High gain • High peak curre

文件：217.53 Kbytes 页数：6 Pages

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20V NPN high gain transistor in SOT223

Features • BVCEX > 100V • BVCEO > 20V • BVECO > 6V • IC = 7A High Continuous Current • Low Saturation Voltage VCE(sat)

文件：224.6 Kbytes 页数：6 Pages

DIODES

美台半导体

20V NPN high gain transistor

Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High gain • High peak curre

文件：217.53 Kbytes 页数：6 Pages

ZETEX