20V NPN high gain transistor

Description Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • 7.5A continuous current • Up to 20A peak current • Very low saturation

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20V NPN high gain transistor in SOT89

Features • BVCEO > 20V • IC = 7.5A Continuous Current • Low Saturation Voltage VCE(sat)

文件：423.49 Kbytes 页数：8 Pages

DIODES

美台半导体

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 7.5A SOT89-3

DIODES

美台半导体

20V, SOT23F, PNP medium power transistor

Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features

文件：432.16 Kbytes 页数：8 Pages

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20V, SOT23F, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium Features • High power dissipa

文件：493.39 Kbytes 页数：8 Pages

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20V, SOT23F, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium Features • High power dissipa

文件：493.39 Kbytes 页数：8 Pages

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