DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV max @ 1A) • RSAT = 68mΩ for Low Equivalent On Resistance • hFE specified up to 6A for high current gain holds up • Dual NPN saving footprint and component count • Low profile 0.8mm hig

文件：193.63 Kbytes 页数：7 Pages

DIODES

美台半导体

50V NPN LOW SATURATION TRANSISTOR

Features • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV Max @1A) • RSAT = 68mΩ for a Low Equivalent On-Resistance • hFE Specified up to 6A for High Current Gain Hold Up • Low Profile 0.6mm High Package for Thin Applications • RJA Efficient, 60 Lower th

文件：161.11 Kbytes 页数：7 Pages

DIODES

美台半导体

50V NPN LOW SATURATION TRANSISTOR

Features • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV Max @1A) • RSAT = 68mΩ for a Low Equivalent On-Resistance • hFE Specified up to 6A for High Current Gain Hold Up • Low Profile 0.6mm High Package for Thin Applications • RJA Efficient, 60 Lower th

文件：161.11 Kbytes 页数：7 Pages

DIODES

美台半导体

SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR

文件：1.65281 Mbytes 页数：3 Pages

Zetex

Single & Dual Output, 6W Ultra-Wide Input Range DC/DC Converters

文件：193.6 Kbytes 页数：2 Pages

MPD

CMOS -5 V/ 5V 4 OHM SINGLE SPDT SWITCHES

GENERAL DESCRIPTION The ADG619/ADG620 are monolithic, CMOS single-pole double-throw (SPDT) switches. Each switch conducts equally well in both directions when the device is on. FEATURES 6.5 Ω (maximum) on resistance 0.8 Ω (maximum) on-resistance flatness 2.7 V to 5.5 V single

文件：145.3 Kbytes 页数：8 Pages

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