DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV @ 1A) • RSAT = 47mΩ for a Low Equivalent On-Resistance • hFE specified up to 6A for high current gain hold up • Dual NPN saving footprint and component count • Low profile 0.8mm high

文件：190.02 Kbytes 页数：7 Pages

DIODES

美台半导体

20V NPN LOW SATURATION TRANSISTOR

Features and Benefits • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47 mΩ for a low equivalent On-Resistance • hFE specified up to 6A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA effic

文件：164.64 Kbytes 页数：7 Pages

DIODES

美台半导体

20V NPN LOW SATURATION TRANSISTOR

Features and Benefits • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47 mΩ for a low equivalent On-Resistance • hFE specified up to 6A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA effic

文件：164.64 Kbytes 页数：7 Pages

DIODES

美台半导体

20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL

Features and Benefits NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47mΩ for a low equivalent On-Resistance • hFE characterized up to 6A for high current gain hold up Schottky Diode • BVR > 40V

文件：270.82 Kbytes 页数：10 Pages

DIODES

美台半导体