MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2732T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −20 A) RDS(on)2 = 6.7 mΩ MAX. (VGS = −4.5

文件：350.12 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2732T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −20 A) RDS(on)2 = 6.7 mΩ MAX. (VGS = −4.5

文件：350.12 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2732T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −20 A) RDS(on)2 = 6.7 mΩ MAX. (VGS = −4.5

文件：350.12 Kbytes 页数：8 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOSFET

DESCRIPTION\nThe μ PA2732T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.FEATURES\n•Low on-state resistance\nRDS(on)1= 3.7 mΩMAX. (VGS= −10 V, ID= −20 A)\nRDS(on)2= 6.7 mΩMAX. (VGS= −4.5 V, ID= −20 A) •Low on-state resistance\nRDS(on)1= 3.7 mΩMAX. (VGS= −10 V, ID= −20 A)\nRDS(on)2= 6.7 mΩMAX. (VGS= −4.5 V, ID= −20 A)\n•Low Ciss: Ciss= 3280 pF TYP.\n•Built-in gate protection diode\n•Small and surface mountpackage (8pin HVSON);

Renesas

瑞萨