MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2734GR is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −4.5 V, ID = −7.0 A) RDS(on)2 = 72 mΩ MAX. (VGS = −2.5 V, ID = −3.5 A) • Low input capacitance

文件：356.14 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2734GR is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −4.5 V, ID = −7.0 A) RDS(on)2 = 72 mΩ MAX. (VGS = −2.5 V, ID = −3.5 A) • Low input capacitance

文件：356.14 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2734GR is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −4.5 V, ID = −7.0 A) RDS(on)2 = 72 mΩ MAX. (VGS = −2.5 V, ID = −3.5 A) • Low input capacitance

文件：356.14 Kbytes 页数：8 Pages

RENESAS

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16/32-Bit Single-Chip Microcontroller with 32-Bit Performance

文件：1.58169 Mbytes 页数：106 Pages

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英飞凌