UPA2762UGR说明书PDF资料供应代理瑞萨-114ic电子网

首页 >UPA2762UGR>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
UPA2762UGR	文件：207.45 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features • Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low Ciss: Ciss 文件：207.45 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA2762UGR-E1-AT	文件：207.45 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features • Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low Ciss: Ciss 文件：207.45 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA2762UGR-E2-AT	文件：207.45 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features • Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low Ciss: Ciss 文件：207.45 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA2762UGR	文件：300 bytes Page：1 Pages	MOS FIELD EFFECT TRANSISTOR	Renesas 瑞萨	Renesas

更多UPA2762UGR供应商更新时间2025-10-6 14:14:00