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UPA2762UGR

MOS FIELD EFFECT TRANSISTOR

Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features •Lowon-stateresistance ⎯RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ⎯RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) •LowCiss:Ciss

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPA2762UGR-E1-AT

MOS FIELD EFFECT TRANSISTOR

Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features •Lowon-stateresistance ⎯RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ⎯RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) •LowCiss:Ciss

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPA2762UGR-E2-AT

MOS FIELD EFFECT TRANSISTOR

Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features •Lowon-stateresistance ⎯RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ⎯RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) •LowCiss:Ciss

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC2762T

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC2762T

3V,WIDEBANDMEDIUMPOWERSIMMICAMPLIFIER

DESCRIPTION TheUPC2762TandUPC2763TareSiliconMonolithicintegratedcircuitswhicharemanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Theseamplifiersweredesignedfor900MHzand1.9GHzreceiversincellular,cordlessteleph

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz •Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=30mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz •Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz •Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=30mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz •Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz •Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    UPA2762UGR

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
1950+
SOP-8
6852
只做原装正品现货!或订货假一赔十!
询价
RENESAS
20+
SOP-8
63258
原装优势主营型号-可开原型号增税票
询价
ST/意法
23+
TO-252
69820
终端可以免费供样,支持BOM配单!
询价
RENESAS/瑞萨
24+
NA/
3350
原装现货,当天可交货,原型号开票
询价
RENESAS/瑞萨
22+
SOP-8
25000
只有原装原装,支持BOM配单
询价
RENESAS
2406+
SOP-8
34960
优势代理渠道 原装现货 可全系列订货
询价
RENESAS
21+
SOP
12588
原装正品,自己库存 假一罚十
询价
RENESAS/瑞萨
23+
SOP-8
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
RENESAS/瑞萨
23+
SOP-8
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
RENESAS
1709+
SOP8
260000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多UPA2762UGR供应商 更新时间2025-5-16 18:55:00