MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2743T1A is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Built-in gate prot

文件：274.65 Kbytes 页数：8 Pages

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N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Notebook PC Core • VRM/POL

文件：1.11174 Mbytes 页数：7 Pages

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微碧半导体

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2743T1A is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Built-in gate prot

文件：274.65 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2743T1A is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Built-in gate prot

文件：274.65 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

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