MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) • Low Ciss:

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P-Channel 30-V (D-S) MOSFET

文件：1.6871 Mbytes 页数：8 Pages

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微碧半导体

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) • Low Ciss:

文件：341.07 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) • Low Ciss:

文件：341.07 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) • Low Ciss:

文件：341.07 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) • Low Ciss:

文件：341.07 Kbytes 页数：8 Pages

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