MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2747UT1A is N-channel MOS Field Effect Transistor designed for DC/DC converter applications. FEATURES • Low on-state resistance • RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) • RDS(on)2 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) • Low QG • Thin type surface mount package

文件：357.6 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2747UT1A is N-channel MOS Field Effect Transistor designed for DC/DC converter applications. FEATURES • Low on-state resistance • RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) • RDS(on)2 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) • Low QG • Thin type surface mount package

文件：357.6 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2747UT1A is N-channel MOS Field Effect Transistor designed for DC/DC converter applications. FEATURES • Low on-state resistance • RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) • RDS(on)2 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) • Low QG • Thin type surface mount package

文件：357.6 Kbytes 页数：8 Pages

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SOP8

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上传：深圳市正纳电子有限公司

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SOP8

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上传：深圳市正纳电子有限公司