UPA2732T1A-E1-AZ数据手册Renesas中文资料规格书

描述 Description

DESCRIPTION
The μ PA2732T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.FEATURES
•Low on-state resistance
RDS(on)1= 3.7 mΩMAX. (VGS= −10 V, ID= −20 A)
RDS(on)2= 6.7 mΩMAX. (VGS= −4.5 V, ID= −20 A)
•Low Ciss: Ciss= 3280 pF TYP.
•Built-in gate protection diode
•Small and surface mountpackage (8pin HVSON)

特性 Features

•Low on-state resistance
RDS(on)1= 3.7 mΩMAX. (VGS= −10 V, ID= −20 A)
RDS(on)2= 6.7 mΩMAX. (VGS= −4.5 V, ID= −20 A)
•Low Ciss: Ciss= 3280 pF TYP.
•Built-in gate protection diode
•Small and surface mountpackage (8pin HVSON)