UPA2732UT1A

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2732UT1AisP-channelMOSFieldEffectTransistordesigned forpowermanagementapplicationsofnotebookcomputersandLi-ion batteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−20A) RDS(on)2=6.7mΩMAX.(VGS=−4.

UPA2732UT1A

P-Channel 30-V (D-S) MOSFET

UPA2732UT1A-E1-AZ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2732UT1AisP-channelMOSFieldEffectTransistordesigned forpowermanagementapplicationsofnotebookcomputersandLi-ion batteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−20A) RDS(on)2=6.7mΩMAX.(VGS=−4.

UPA2732UT1A-E1-AZ

SWITCHING P-CHANNEL POWER MOSFET; •Low on-state resistance\n   RDS(on)1= 3.7 mΩMAX. (VGS= −10 V, ID= −20 A)\n   RDS(on)2= 6.7 mΩMAX. (VGS= −4.5 V, ID= −20 A)\n•Low Ciss: Ciss= 3280 pF TYP.\n•Small and surface mountpackage (8pin HVSON);

DESCRIPTION\nThe μ PA2732UT1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.FEATURES\n•Low on-state resistance\n   RDS(on)1= 3.7 mΩMAX. (VGS= −10 V, ID= −20 A)\n   RDS(on)2= 6.7 mΩMAX. (VGS= −4.5 V, ID= −20 A)\n•Low Ciss: Ciss= 3280 pF TYP.\n•Small and surface mountpackage (8pin HVSON)

UPA2732UT1A-E2-AZ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2732UT1AisP-channelMOSFieldEffectTransistordesigned forpowermanagementapplicationsofnotebookcomputersandLi-ion batteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−20A) RDS(on)2=6.7mΩMAX.(VGS=−4.