MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA2703GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Lo

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瑞萨

P-Channel 70 V (D-S) MOSFET

文件：756.35 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel 70 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

文件：752.7 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Thyristors (SiBOD Breakover Devices)

[CRYDOM] Get TVS Insurance From The People Who Know There’s too much riding on over-voltage surge protection to take chances. That’s why more and more people are turning to Crydom. Crydom’s SiBOD Series Equals “Crow Bar” Protection To protect sensitive telecommunications circuitry, Crydom Th

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