MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2716AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Lithium-Ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −10 V, ID = −7.0 A) RDS(on)2 = 11.3 mΩ MAX. (VGS

文件：356.01 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2716GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.0 A) RDS(on)2 = 11.3 mΩ MAX. (VGS = –4.

文件：366.66 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOSFET

文件：149.47 Kbytes 页数：7 Pages

NEC

瑞萨

64K(8K x 8) UV ERASABLE PROMs

文件：1.37774 Mbytes 页数：10 Pages

INTEL

英特尔

Bandpass Filter

General Description KR 2716 is a 26 MHz bandpass filter. The filter has a minimum 0.7 dB bandwidth of 4 MHz. Other passband frequencies are available. Please consult the factory. Features • SMA Connectors • Sharp Transition to Stopband • 50 Ω Source and Load

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KR

Halogen and Phosphorus-Free 94V-0 Hole Plugs

文件：136.28 Kbytes 页数：1 Pages

HEYCO