MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low QGD QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) • Thin typ

文件：179.14 Kbytes 页数：6 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low QGD QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) • Thin type surface

文件：351.96 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low QGD QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) • Thin type surface

文件：351.96 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low QGD QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) • Thin typ

文件：179.14 Kbytes 页数：6 Pages

NEC

瑞萨