MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA2710GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = –10 V, ID = –7.5 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = –4.5

文件：241.52 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOSFET

文件：75.13 Kbytes 页数：7 Pages

NEC

瑞萨

SWITCHING P-CHANNEL POWER MOSFET

Renesas

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1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b

文件：95.73 Kbytes 页数：6 Pages

NEC

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BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：416.77 Kbytes 页数：13 Pages

CEL

5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：320.16 Kbytes 页数：14 Pages

CEL