MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2709AGR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) • Lo

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2709GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) • Low

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2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

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5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2709TB has compatible pin connections and performance to µPC2709T of conventional m

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