5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2709TB has compatible pin connections and performance to µPC2709T of conventional m

文件：95.82 Kbytes 页数：6 Pages

NEC

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2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

文件：96.88 Kbytes 页数：6 Pages

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 4.5 to 5.5 V • Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth • Medium output power : PO (sat) = +11.5 dBm@f = 1 GHz with external inductor • Power gain : GP = 23 dB TYP. @f = 1 GHz • Port impedance : input/output 50 W

文件：313.12 Kbytes 页数：18 Pages

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BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 ´ 1.25 ´ 0.9 mm) • Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth • Medium output power : PO (sat) = +11.5 dBm@f = 1 GHz with external inductor • Supply voltage : VCC = 4.5 to 5.5 V • Power gain : GP = 23 dB T

文件：225.08 Kbytes 页数：18 Pages

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瑞萨

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2709TB has compatible pin connections and performance to µPC2709T of conventional m

文件：95.82 Kbytes 页数：6 Pages

NEC

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2709TB has compatible pin connections and performance to µPC2709T of conventional m

文件：95.82 Kbytes 页数：6 Pages

NEC

瑞萨

丝印：C1E；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 ´ 1.25 ´ 0.9 mm) • Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth • Medium output power : PO (sat) = +11.5 dBm@f = 1 GHz with external inductor • Supply voltage : VCC = 4.5 to 5.5 V • Power gain : GP = 23 dB T

文件：225.08 Kbytes 页数：18 Pages

RENESAS

瑞萨

丝印：C1E；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 4.5 to 5.5 V • Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth • Medium output power : PO (sat) = +11.5 dBm@f = 1 GHz with external inductor • Power gain : GP = 23 dB TYP. @f = 1 GHz • Port impedance : input/output 50 W

文件：313.12 Kbytes 页数：18 Pages

RENESAS

瑞萨

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

文件：96.88 Kbytes 页数：6 Pages

NEC

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：93.59 Kbytes 页数：16 Pages

NEC

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