MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2721AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 10 mΩ MAX. (VGS = 5.0 V, ID = 10 A) • Low input capacitance C

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2721AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 10 mΩ MAX. (VGS = 5.0 V, ID = 10 A) • Low input capacitance C

文件：271.54 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2721AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 10 mΩ MAX. (VGS = 5.0 V, ID = 10 A) • Low input capacitance C

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2721GR is N-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 4.5 V,

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GENERAL PURPOSE L-BAND DOWN CONVERTER ICs

[NEC] SEMICONDUCTOR SELECTION GUIDE

文件：90.01 Kbytes 页数：12 Pages

NEC

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SILICON MMIC L BAND DOWNCONVERTER

DESCRIPTION The µPC2721/2722 are Silicon monolithic ICs designed for L-band down converter. These ICs consist of double balanced mixer, local oscillator, local oscillation buffer amplifier, IF amplifier, and voltage regulator. The packages are 8 pin SOP or SSOP suitable for high-density surf

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NEC

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