Field Effect Transistor Silicon P-Channel MOS Type (U-MOS??

Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 14.5 mΩ (typ.) (VGS = -10 V) • Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) • Enhancement mode: Vth

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID -15 A \nPower Dissipation PD 26 W \nDrain-Source voltage VDSS -30 V ;

Toshiba

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Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.5 to −1.2 V

文件：224.05 Kbytes 页数：7 Pages

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

文件：212.29 Kbytes 页数：7 Pages

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Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 44S (typ.) • Low leakage current: IDSS = −10 μA (

文件：223.27 Kbytes 页数：7 Pages

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