TPCC8102

Field Effect Transistor Silicon P-Channel MOS Type (U-MOS??

NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance: RDS(ON)=14.5mΩ(typ.)(VGS=-10V) •Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) •Enhancementmode:Vth

TPCC8102

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCC8102

Power MOSFET (P-ch single); Drain current ID -15 A \nPower Dissipation PD 26 W \nDrain-Source voltage VDSS -30 V \n;

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\n

TPCF8102

FieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=24mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=14S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−20V) •Enhancementmode:Vth=−0.5to−1.2V

TPCF8102

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

TPCM8102

FieldEffectTransistorSiliconPChannelMOSType(U-MOS??

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=6.0mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=44S(typ.) •Lowleakagecurrent:IDSS=−10μA(