Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 44S (typ.) • Low leakage current: IDSS = −10 μA (

文件：223.27 Kbytes 页数：7 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

Toshiba

东芝

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs

文件：392.75 Kbytes 页数：7 Pages

TOSHIBA

东芝

RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM

DESCRIPTION µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable for high-density surface mounting. This IC is manufa

文件：147.02 Kbytes 页数：20 Pages

NEC

瑞萨

RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM

DESCRIPTION µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable for high-density surface mounting. This IC is manufa

文件：147.02 Kbytes 页数：20 Pages

NEC

瑞萨