Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 44S (typ.) • Low leakage current: IDSS = −10 μA (

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Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ??

Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 13.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 24 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) • Enhancement

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs

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