TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = −10 μA (max

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Silicon P Channel MOS Type (U-MOS??

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Power MOSFET (P-ch dual)

Polarity：P-ch×2\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current (Q1) ID -5 A \nDrain current (Q2) ID -5 A \nPower Dissipation PD 1.48 W \nDrain-Source voltage (Q1) VDSS -20 V \nDrain-Source voltage (Q2) VDSS -20 V ;

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Silicon P Channel MOS Type (U-MOS??

文件：272.86 Kbytes 页数：7 Pages

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