TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 µA (max

文件：304 Kbytes 页数：7 Pages

TOSHIBA

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Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：188.51 Kbytes 页数：7 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type

文件：200.13 Kbytes 页数：7 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type

Toshiba

东芝

Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type

文件：200.13 Kbytes 页数：7 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：188.51 Kbytes 页数：7 Pages

TOSHIBA

东芝