TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 μA (max

文件：224.71 Kbytes 页数：7 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：209.62 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Toshiba

东芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：209.62 Kbytes 页数：7 Pages

TOSHIBA

东芝