TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications ● Small footprint due to small and thin package ● Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 10 S (typ.) ● Low leakage current: IDSS = 10 μA (max

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TOSHIBA

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Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

文件：842.68 Kbytes 页数：7 Pages

TOSHIBA

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Dual N-Channel 25-V (D-S) MOSFET

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VBSEMI

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Toshiba

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Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

文件：842.68 Kbytes 页数：7 Pages

TOSHIBA

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