TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5~1.2 V (VDS =

文件：205.63 Kbytes 页数：7 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications

文件：193.48 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Toshiba

东芝

Lithium Ion Battery Applications

文件：193.48 Kbytes 页数：7 Pages

TOSHIBA

东芝