TOSHIBA Transistor Silicon NPN Epitaxial Type

High Speed Switching Applications DC-DC Converter Applications • High DC current gain : hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation : VCE (sat) = 0.12 V (max) • High-speed switching : tf = 25 ns (typ.)

文件：224.91 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：8504；Package：PS-12；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：High-speed switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Collector Current IC 2 A \nCollector Current ICP 3.5 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.2 W \nCollector-emitter voltage VCEO 10 V ;

Toshiba

东芝

MOSFETs Silicon N-channel MOS (U-MOS??H)

文件：468.07 Kbytes 页数：9 Pages

TOSHIBA

东芝

xDSL Interface Transformers

文件：129.039 Kbytes 页数：1 Pages

COILCRAFT

xDSL Interface Transformers

文件：60.44 Kbytes 页数：1 Pages

COILCRAFT